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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
DISCRETE SEMICONDUCTORS DATA SHEET BFS17 NPN 1 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. handbook, 2 columns 21 APPLICATIONS • A wide range of RF applications such as: – Mixers and oscillators in TV tuners – RF communications equipment. 3 MSB003 Top view PINNING PIN DESCRIPTION Marking code: E1p. 1 base 2 emitter Fig.1 SOT23. 3 collector QUICK REFERENCED DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter - 25 V VCEO collector-emitter voltage open base - 15 V IC DC collector current - 25 mA Ptot total power dissipation up to Ts
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bfs17 Datasheet, Design, MOSFET, Power
bfs17 RoHS, Compliant, Service, Triacs, Semiconductor
bfs17 Database, Innovation, IC, Electricity
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