View bfs17lt1 datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BFS17LT1/D The RF Line NPN Silicon BFS17LT1 High-Frequency Transistor Designed primarily for use in high–gain, low–noise amplifier, oscillator and mixer applications. Packaged for thick or thin film circuits using surface mount components. • T1 suffix indicates tape and reel packaging of 3,000 units per reel. RF TRANSISTOR MAXIMUM RATINGS NPN SILICON Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Base Voltage VCBO 25 Vdc Maximum Junction Temperature TJmax 150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, TA = 25°C PD 350 mW Derate above 25°C (1) 2.8 mW/°C Storage Temperature Tstg –55 to +150 °C CASE 318–08, STYLE 6 Thermal Resistance Junction