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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

bfs17s

BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration Package BFS 17S MCs Q62702-F1645 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Maximum Ratings of any single Transistor Parameter Symbol Values Unit Collector-emitter voltage VCEO 15 V Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2.5 Collector current IC 25 mA Peak collector current ICM f ? 10 MHz 50 Total power dissipation Ptot mW TS ? 83 °C 280 Junction temperature Tj 150 °C Ambient temperature TA - 65 + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction - soldering point RthJS ? 240 K/W 1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm Semiconductor

Keywords

 bfs17s Datasheet, Design, MOSFET, Power

 bfs17s RoHS, Compliant, Service, Triacs, Semiconductor

 bfs17s Database, Innovation, IC, Electricity

 

 
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