View bfs482 datasheet:

BFS 482 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. • fT = 8GHz F = 1.2dB at 900MHz • Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFS 482 RGs Q62702-F1573 1/4 = B 2/5 = E 3/6 = C SOT-363 data below is of a single transistor Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 35 mA Base current IB 4 Total power dissipation Ptot mW TS ? 81 °C 250 Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150