View bfs483 datasheet:

BFS 483 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA • fT = 8GHz F = 1.2dB at 900MHz • Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFS 483 RHs Q62702-F1574 1/4 = B 2/5 = E 3/6 = C SOT-363 data below is of a single transistor Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 65 mA Base current IB 5 Total power dissipation Ptot mW TS ? 40 °C 450 Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Sto