View blf248 datasheet:

DISCRETE SEMICONDUCTORS DATA SHEET BLF248 VHF push-pull power MOS transistor September 1992 Product specification Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF248 FEATURES PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability 1 2 • Gold metallization ensures d2 halfpage excellent reliability. g2 s g1 DESCRIPTION d1 55 Dual push-pull silicon N-channel 3 4 MBB157 MSB008 Top view enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range. Fig.1 Simplified outline and symbol. The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange envelope, with two ceramic caps. The CAUTION mounting flange provides the The device is