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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
BSP 149 SIPMOS? Small-Signal Transistor VDS 200 V ID 0.48 A RDS(on) 3.5 ? N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Tape and Reel Information Pin Configuration Marking Package Code 1 2 3 4 BSP 149 Q67000-S071 E6327: 1000 pcs/reel G D S D BSP 149 SOT-223 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 200 V Drain-gate voltage, RGS = 20 k? VDGR 200 Gate-source voltage VGS ± 20 ESD Sensitivity (HBM) as per MIL-STD 883 – Class 1 Continuous drain current, TA = 28 ?C ID 0.48 A Pulsed drain current, TA = 25 ?C ID puls 1.44 Max. power dissipation, TA = 25 ?C Ptot 1.8 W Operating and storage temperature range Tj, Tstg – 55 … + 150 ?C 1) Thermal resistance chip-ambient RthJA 70 K/W chip-soldering
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