View bsp308 datasheet:

Preliminary data BSP308 SIPMOS? Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 30 V • Enhancement mode Drain-Source on-state resistance RDS(on) 0.05 ? • Logic Level Continuous drain current ID 4.7 A • dv/dt rated 4 3 2 1 VPS05163 Type Package Ordering Code Pin 1 Pin 2/4 PIN 3 BSP308 SOT-223 Q67000-S4011 G D S Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current ID 4.7 A Pulsed drain current ID puls 18.8 TA = 25 °C Reverse diode dv/dt dv/dt 6 kV/µs IS = 4.7 A, VDS = 20 V, di/dt = 200 A/µs, Tjmax = 150 °C Gate source voltage VGS V ±20 Power dissipation Ptot 1.8 W TA = 25 °C Operating and storage temperature Tj , Tstg -55...+150 °C IEC climatic category; DIN IEC 68-1 55/1