View bsp318s datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Final data BSP318S SIPMOS? Small-Signal-Transistor Features Product Summary • N-Channel Drain source voltage VDS 60 V • Enhancement mode Drain-Source on-state resistance RDS(on) 0.09 ? • Avalanche rated Continuous drain current ID 2.6 A • Logic Level 4 • dv/dt rated 3 2 1 VPS05163 Type Package Ordering Code Pin 1 Pin 2, 4 PIN 3 BSP318S SOT-223 Q67000-S4002 G D S Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current ID 2.6 A Pulsed drain current ID puls 10.4 TA = 25 °C Avalanche energy, single pulse EAS 60 mJ ID = 2.6 A, VDD = 25 V, RGS = 25 ? Avalanche current,periodic limited by Tjmax IAR 2.6 A Avalanche energy, periodic limited by Tjmax EAR 0.18 mJ Reverse diode dv/dt dv/dt 6 kV/µs IS = 2.6 A, VDS = 20
Keywords
bsp318s Datasheet, Design, MOSFET, Power
bsp318s RoHS, Compliant, Service, Triacs, Semiconductor
bsp318s Database, Innovation, IC, Electricity
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