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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

bss101

BSS 101 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 Pin 2 Pin 3 S G D Type VDS ID RDS(on) Package Marking BSS 101 240 V 0.13 A 16 ? TO-92 SS 101 Type Ordering Code Tape and Reel Information BSS 101 Q62702-S493 E6288 BSS 101 Q62702-S636 E6325 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 240 V V Drain-gate voltage DGR RGS = 20 k? 240 Gate source voltage VGS ± 20 ESD Sensitivity (HBM) as per MIL-STD 883 Class 1 Continuous drain current ID A TA = 33 ?C 0.13 DC drain current, pulsed IDpuls TA = 25 ?C 0.52 Power dissipation Ptot W TA = 25 ?C 0.63 Data Sheet 1 05.99 BSS 101 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 ?C Storage t

Keywords

 bss101 Datasheet, Design, MOSFET, Power

 bss101 RoHS, Compliant, Service, Triacs, Semiconductor

 bss101 Database, Innovation, IC, Electricity

 

 
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