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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

bss123

BSS 123 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 Pin 2 Pin 3 G S D Type VDS ID RDS(on) Package Marking BSS 123 100 V 0.17 A 6 ? SOT-23 SAs Type Ordering Code Tape and Reel Information BSS 123 Q62702-S512 E6327 BSS 123 Q67000-S245 E6433 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 100 V V Drain-gate voltage DGR RGS = 20 k? 100 Gate source voltage VGS ± 20 ESD Sensitivity (HBM) as per MIL-STD 883 Class 1 Continuous drain current ID A TA = 28 ?C 0.17 DC drain current, pulsed IDpuls TA = 25 ?C 0.68 Power dissipation Ptot W TA = 25 ?C 0.36 Data Sheet 1 05.99 BSS 123 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 ?C Storage temp

Keywords

 bss123 Datasheet, Design, MOSFET, Power

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