View bss135 datasheet:

SIPMOS? Small-Signal Transistor BSS 135 VDS 600 V ID 0.080 A RDS(on) 60 ? N channel Depletion mode High dynamic resistance 3 2 Available grouped in VGS(th) 1 Type Ordering Tape and Reel Pin Configuration Marking Package Code Information 1 2 3 BSS 135 Q67000-S237 E6325: 2000 pcs/carton; G D S SS135 TO-92 Ammopack Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 600 V Drain-gate voltage, RGS = 20 k? VDGR 600 Gate-source voltage VGS ± 14 Gate-source peak voltage, aperiodic Vgs ± 20 Continuous drain current, TA = 42 ?C ID 0.080 A Pulsed drain current, TA = 25 ?C ID puls 0.24 Max. power dissipation, TA = 25 ?C Ptot 1.0 W Operating and storage temperature range Tj, Tstg – 55 … + 150 ?C Thermal resistance, chip-ambient RthJA ? 125 K/W (withou