View bss139 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
BSS 139 SIPMOS? Small-Signal Transistor VDS 250 V ID 0.04 A RDS(on) 100 ? N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Tape and Reel Pin Configuration Marking Package Code Information 1 2 3 BSS 139 Q62702-S612 E6327: 3000 pcs/reel; G S D STs SOT-23 BSS 139 Q67000-S221 E7941: 3000 pcs/reel; VGS(th) selected in groups: (see page 3) Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 250 V Drain-gate voltage, RGS = 20 k? VDGR 250 Gate-source voltage VGS ± 20 ESD Sensitivity (HBM) as per MIL-STD 883 – Class 1 Continuous drain current, TA = 25 ?C ID 0.04 A Pulsed drain current, TA = 25 ?C ID puls 0.12 Max. power dissipation, TA = 25 ?C Ptot 0.36 W Operating and storage temperature range Tj, Tstg –
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bss139 Datasheet, Design, MOSFET, Power
bss139 RoHS, Compliant, Service, Triacs, Semiconductor
bss139 Database, Innovation, IC, Electricity
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