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bss169

Preliminary Data BSS 169 SIPMOS ® Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance Pin 1 Pin 2 Pin 3 G S D Type VDS ID RDS(on) Package Marking Ordering Code BSS 169 100 V 0.12 A 12 ? SOT-23 SFs Q67000-S322 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 100 V V Drain-gate voltage DGR RGS = 20 k? 100 Gate source voltage VGS ± 14 Gate-source peak voltage, aperiodic Vgs ± 20 Continuous drain current ID A TA = 25 ?C 0.12 DC drain current, pulsed IDpuls TA = 25 ?C 0.36 Power dissipation Ptot W TA = 25 ?C 0.36 Chip or operating temperature Tj -55 ... + 150 ?C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ? 350 K/W Therminal resistance, chip-substrate - reverse side 1) RthJSR ? 2

Keywords

 bss169 Datasheet, Design, MOSFET, Power

 bss169 RoHS, Compliant, Service, Triacs, Semiconductor

 bss169 Database, Innovation, IC, Electricity

 

 
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