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bss229

BSS 229 SIPMOS? Small-Signal Transistor VDS 250 V ID 0.07 A RDS(on) 100 ? N channel Depletion mode High dynamic resistance 3 2 Available grouped in VGS(th) 1 Type Ordering Tape and Reel Pin Configuration Marking Package Code Information 1 2 3 BSS 229 Q62702-S600 E6296: 1500 pcs/reel; G D S SS229 TO-92 2 reels/carton; source first Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 250 V Drain-gate voltage, RGS = 20 k? VDGR 250 Gate-source voltage VGS ± 20 ESD Sensitivity (HBM) as per MIL-STD 883 – Class 1 Continuous drain current, TA = 25 ?C ID 0.07 A Pulsed drain current, TA = 25 ?C ID puls 0.21 Max. power dissipation, TA = 25 ?C Ptot 0.63 W Operating and storage temperature range Tj, Tstg – 55 … + 150 ?C Thermal resistance, chip-ambien

Keywords

 bss229 Datasheet, Design, MOSFET, Power

 bss229 RoHS, Compliant, Service, Triacs, Semiconductor

 bss229 Database, Innovation, IC, Electricity

 

 
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