View bu2508d 1 datasheet:

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508D GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 700 V IC Collector current (DC) - 8 A ICM Collector current peak value - 15 A Ptot Total power dissipation Tmb ? 25 ?C - 125 W VCEsat Collector-emitte