View bu2520df datasheet:

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 800 V IC Collector current (DC) - 10 A ICM Collector current peak value - 25 A Ptot Total power dissipation Ths ? 25 ?C - 45 W VCEsat Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - 5.0 V ICsat Collector saturation current 6 - A VF Diode forward voltage IF = 6.0 A - 2.2