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bu4525dl_1

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4525DL GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope with integrated damper diode intended intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 800 V IC Collector current (DC) - 14 A ICM Collector current peak value - 30 A Ptot Total power dissipation Ths ? 25 ?C - 125 W

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