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buk100-50gl_1

Philips Semiconductors Product specification PowerMOS transistor BUK100-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 13.5 A purpose switch for automotive PD Total power dissipation 40 W systems and other applications. Tj Continuous junction temperature 150 ?C RDS(ON) Drain-source on-state resistance 125 m? APPLICATIONS VIS = 5 V General controller for driving lamps motors solenoids heaters FEATURES FUNCTIONAL BLOCK DIAGRAM Vertical power DMOS output stage DRAIN Low on-state resistance Overload protection against over temperature Overload

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