View buk481-60a 1 datasheet:

Philips Semiconductors Product specification PowerMOS transistor BUK481-60A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 1.6 A The device is intended for use in Ptot Total power dissipation 1.5 W automotive and general purpose Tj Junction temperature 150 ?C switching applications. RDS(ON) Drain-source on-state 0.35 ? resistance; VGS = 10 V PINNING - SOT223 PIN CONFIGURATION SYMBOL PIN DESCRIPTION d 4 1 gate 2 drain g 3 source 4 drain (tab) 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. U