View buk581-100a 2 datasheet:

Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 100 V suitable for surface mount ID Drain current (DC) 0.9 A applications. Ptot Total power dissipation 1.5 W The device is intended for use in Tj Junction temperature 150 ?C automotive and general purpose RDS(ON) Drain-source on-state 0.90 ? switching applications. resistance; VGS = 5 V PINNING - SOT223 PIN CONFIGURATION SYMBOL PIN DESCRIPTION d 4 1 gate 2 drain g 3 source 4 drain (tab) 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL P