View buk7514 7614-55a 1 datasheet:

Philips Semiconductors Product specification TrenchMOS? transistor BUK7514-55A Standard level FET BUK7614-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 73 A Using ’trench’ technology which Ptot Total power dissipation 149 W features very low on-state Tj Junction temperature 175 ?C resistance. It is intended for use in RDS(ON) Drain-source on-state automotive and general purpose resistance VGS = 10 V 14 m? switching applications. PINNING TO220AB & SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION tab d mb 1 gate 2 drain 2 g 3 source 1 3 1 2 3 SOT404 TO220AB tab/mb