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View buk7514 7614-55a 1 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

buk7514_7614-55a_1

Philips Semiconductors Product specification TrenchMOS? transistor BUK7514-55A Standard level FET BUK7614-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 73 A Using ’trench’ technology which Ptot Total power dissipation 149 W features very low on-state Tj Junction temperature 175 ?C resistance. It is intended for use in RDS(ON) Drain-source on-state automotive and general purpose resistance VGS = 10 V 14 m? switching applications. PINNING TO220AB & SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION tab d mb 1 gate 2 drain 2 g 3 source 1 3 1 2 3 SOT404 TO220AB tab/mb

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 buk7514 7614-55a 1 Datasheet, Design, MOSFET, Power

 buk7514 7614-55a 1 RoHS, Compliant, Service, Triacs, Semiconductor

 buk7514 7614-55a 1 Database, Innovation, IC, Electricity

 

 
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