View buk7515-100a 1 datasheet:

Philips Semiconductors Product specification TrenchMOS? transistor BUK7515-100A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 100 V ’trench’ technology which features ID Drain current (DC) 75 A very low on-state resistance. It is Ptot Total power dissipation 230 W intended for use in automotive and Tj Junction temperature 175 ?C general purpose switching RDS(ON) Drain-source on-state 15 m? applications. resistance VGS = 10 V PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximu