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buk7830-30_1

Philips Semiconductors Product specification TrenchMOS? transistor BUK7830-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting. Using ID Drain current (DC) Tsp = 25 ?C 12.8 A trench technology, th

Keywords

 buk7830-30 1 Datasheet, Design, MOSFET, Power

 buk7830-30 1 RoHS, Compliant, Service, Triacs, Semiconductor

 buk7830-30 1 Database, Innovation, IC, Electricity

 

 
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