View buk9514-55 2 datasheet:

Philips Semiconductors Product specification TrenchMOS? transistor BUK9514-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using ’trench’ VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 68 A low on-state resistance and has Ptot Total power dissipation 142 W integral zener diodes giving ESD Tj Junction temperature 175 ?C protection up to 2kV. It is intended for RDS(ON) Drain-source on-state 14 m? use in automotive and general resistance VGS = 5 V purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VAL