View cph6301 datasheet:

Ordering number:EN5938 P-Channel MOS Silicon FET CPH6301 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2151 · 2.5V drive. [CPH6301] 0.15 2.9 6 5 4 0 to 0.1 1 : Drain 1 2 3 2 : Drain 0.95 3 : Gate 4 : Source 5 : Drain 6 : Drain 0.4 SANYO : CPH6 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS –20 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID –3 A Drain Current (pulse) IDP PW? 10µs, duty cycle? 1% –12 A Allowable Power Dissipation PD Mounted on a ceramic board (900mm2? 0.8mm) 1.6 W Channel Temperature Tch 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C