View cph6304 datasheet:

Ordering number : ENN6917 CPH6304 P-Channel Silicon MOSFET CPH6304 High-Speed Switching Applications Preliminary Features Package Dimensions • Low ON-resistance. unit : mm • High-speed switching. 2151A • 4V drive. [CPH6304] 0.15 2.9 6 5 4 0.05 1 2 3 0.95 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 0.4 6 : Drain Specifications SANYO : CPH6 Absolute Maximum Ratings at Ta=25° C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS ± 20 V Drain Current (DC) ID --4 A Drain Current (Pulse) IDP PW? 10µ s, duty cycle? 1% --16 A Allowable Power Dissipation PD Mounted on a ceramic board (900mm2 0.8mm) 1.6 W Channel Temperature Tch 150 ° C Storage Temperature Tstg --55 to +150 ° C Electrical Characteristics at