View cph6306 datasheet:

Ordering number:ENN6348 P-Channel Silicon MOSFET CPH6306 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2151A · 4V drive. [CPH6306] 0.15 2.9 6 5 4 0.05 1 2 3 0.95 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 0.4 6 : Drain SANYO : CPH6 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS –60 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID –1.8 A Drain Current (pulse) IDP PW? 10µs, duty cycle? 1% –7.2 A Mounted on a ceramic board (900mm2? 0.8mm) Allowable Power Dissipation PD 1.6 W ?C Channel Temperature Tch 150 Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C