View cph6311 datasheet:

Ordering number : ENN6794 CPH6311 P-Channel Silicon MOSFET CPH6311 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions • Low ON-state resistance. unit : mm • Ultrahigh-speed switching. 2151A • 2.5V drive. [CPH6311] 0.15 2.9 6 5 4 0.05 1 : Drain 2 : Drain 1 2 3 3 : Gate 0.95 4 : Source 5 : Drain 6 : Drain Specifications 0.4 SANYO : CPH6 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID --5 A Drain Current (Pulse) IDP PW?10µs, duty cycle?1% --20 A Mounted on a ceramic board (900mm2 0.8mm) 1.6 W Allowable Power Dissipation PD Mounted on a FR4 board PW?5S 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tst