View cph6318 datasheet:

Ordering number : ENN7212 CPH6318 P-Channel Silicon MOSFET CPH6318 High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. unit : mm • High-speed switching. 2151A • 1.8V drive. [CPH6318] 0.15 2.9 6 5 4 0.05 1 2 3 0.95 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 0.4 6 : Drain Specifications SANYO : CPH6 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS ±8 V Drain Current (DC) ID --6 A Drain Current (Pulse) IDP PW?10µs, duty cycle?1% --24 A Mounted on a ceramic board (900mm2 0.8mm) 1.6 W Allowable Power Dissipation PD Mounted on a FR4 board PW?5s 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical