View cph6351 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number : ENN6936 CPH6351 P-Channel Silicon MOSFET CPH6351 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2151A • 2.5V drive. [CPH6351] 0.15 2.9 5 6 4 0.05 1 : Drain 2 : Drain 1 2 3 3 : Gate 0.95 4 : Source 5 : Drain 6 : Drain Specifications 0.4 SANYO : CPH6 Absolute Maximum Ratings at Ta=25° C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS ± 10 V Drain Current (DC) ID --3 A Drain Current (Pulse) IDP PW? 10µ s, duty cycle? 1% --12 A Allowable Power Dissipation PD Mounted on a ceramic board (900mm2 0.8mm) 1.6 W Channel Temperature Tch 150 ° C Storage Temperature Tstg --55 to +150 ° C Electrical Charac
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cph6351 Datasheet, Design, MOSFET, Power
cph6351 RoHS, Compliant, Service, Triacs, Semiconductor
cph6351 Database, Innovation, IC, Electricity
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