View dbb04 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Features Package Dimensions � Single-phase bridge rectifier use. unit:mm � Plastic molded structure. 1205 � Peak reverse voltage:VRM=200, 600V. [DBB04] � Average rectified current:IO=0.4A. Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions DBB04C DBB04G Unit Peak Reverse Voltage VRM 200 600 V Average Recitified Current IO 0.4 A Ta=40?C > Surge Forward Current IFSM 50Hz sine wave, 1cycle > 30 A Junction Temperature Tj > 150 ?C Storage Temperature Tstg > �40 to +150 ?C Electrical Characteristics at Ta = 25?C, per constituent element of bridge Ratings Parameter Symbol Conditions Unit min typ max Forward Voltage VF IF=0.2A 1.05 V Reverse
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dbb04 Datasheet, Design, MOSFET, Power
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