View dbb10 datasheet:

Ordering number:EN1061D DBB10 Diffused Junction Silicon Diode 1.0A Single-Phase Bridge Rectifier Features Package Dimensions · Plastic molded structure. unit:mm · Peak reverse voltage:VRM=100 to 600V. 1112 · Average rectified current:IO=1.0A. [DBB10] Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol DBB10B DBB10E DBB10G Unit Conditions Peak Reverse Voltage VRM 100 400 600 V Average Recitified Current IO 1.0 A > > Surge Forward Current IFSM 50Hz sine wave, 1cycle > > 30 A Junction Temperature Tj > > 150 ?C Storage Temperature Tstg > > –40 to +150 ?C Electrical Characteristics at Ta = 25?C, per constituent element of bridge Ratings Parameter Symbol Conditions Unit min typ max Forward Voltage VF IF=0.5A 1.0 V Reverse Current IR VRM:At each VR