View ech8603 datasheet:

Ordering number : ENN7218 ECH8603 P-Channel Silicon MOSFET ECH8603 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2206 • 2.5V drive. [ECH8603] Bottom View Side View 0.3 0.15 5 6 7 8 4 3 2 1 0.65 1 : Source1 2.9 Top View 2 : Gate1 3 : Source2 8 7 6 5 4 : Gate2 Side View 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Specifications SANYO : ECH8 1 2 3 4 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID --4 A Drain Current (Pulse) IDP PW?10µs, duty cycle?1% --40 A Allowable Power Dissipation PD Mounted on a ceramic board (900mm2 0.8mm)1unit 1.3 W Total