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View esm2012 detailed specifications:

POWER MOSFET, IGBT, IC, TRIACS DATABASE

esm2012

ESM2012DV NPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION TO CASE th SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS MOTOR CONTROL UPS DC/DC & DC/AC CONVERTERS ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = -5 V) 150 V CEV BE VCEO(sus) Collector-Emitter Voltage (IB = 0) 120 V VEBO Emitter-Base Voltage (IC = 0) 7 V I Collector Current 120 A C I Collector Peak Current (t = 10 ms) 180 A CM p IB Base Current 2 A IBM Base Peak Current (tp = 10 ms) 4 A o Ptot Total Dissipation at Tc = 25 C 175 W o T Storage Temperature -55 to 150 C st... See More ⇒

Keywords

 esm2012 Design, MOSFET, Power

 esm2012 RoHS, Compliant, Service, Triacs, Semiconductor

 esm2012 Innovation, IC, Electricity

 

 

 


 
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