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ftd2015

Ordering number:ENN6393 N-Channel Silicon MOSFET FTD2015 Load Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · 4V drive. 2155A · Mounting height 1.1mm. [FTD2015] · Composite type, facilitating high-density mounting. 3.0 0.425 0.65 8 5 1 : Drain1 2 : Source1 1 4 3 : Source1 0.125 4 : Gate1 0.25 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 Specifications SANYO : TSSOP8 Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 4 A Drain Current (pulse) IDP PW? 10µs, duty cycle? 1% 20 A Allowable Power Dissipation PD Mounted on a ceramic board (1000mm2? 0.8mm) 1unit 0.8 W Total Dissipation PT Mounted on a ceramic b

Keywords

 ftd2015 Datasheet, Design, MOSFET, Power

 ftd2015 RoHS, Compliant, Service, Triacs, Semiconductor

 ftd2015 Database, Innovation, IC, Electricity

 

 
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