View fts1001 datasheet:

Ordering number:ENN6093A P-Channel Silicon MOSFET FTS1001 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · 2.5V drive. 2147A · Mounting height 1.1mm. [FTS1001] 3.0 0.425 0.65 85 1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Source 7 : Source 14 8 : Drain 0.125 0.25 SANYO : TSSOP8 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS –20 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID –4 A Drain Current (pulse) IDP PW? 10µs, duty cycle? 1% –20 A Allowable Power Dissipation PD Mounted on a ceramic board (1000mm2? 0.8mm) 1.5 W Channel Temperature Tch 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characterist