View fts1002 datasheet:

Ordering number:EN5887 P-Channel Silicon MOSFET FTS1002 DC-DC Converter Applications Features Package Dimensions · Low ON Resistance. unit:mm · 4V drive. 2147 · Mount height 1.1mm. [FTS1002] 3.0 0.975 0.65 8 5 1:Drain 2:Source 3:Source 4:Gate 5:Drain 1 4 6:Source 0.125 0.25 7:Source 8:Drain SANYO:TSSOP8 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS –30 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID –4 A Drain Current (pulse) IDP PW? 10µs, duty cycle? 1% –20 A Allowable Power Dissipation PD 1.5 W Mounted on a ceramic board (1000mm2? 0.8mm) Channel Temperature Tch 150 ?C ?C Storage Temperature Tstg –55 to +150 Electrical Characteristics at Ta = 25?C Ratings Para