View fts1011 datasheet:

Ordering number : ENN7003 FTS1011 P-Channel Silicon MOSFET FTS1011 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. unit : mm • 2.5V drive. 2147A • Mounting height 1.1mm. [FTS1011] 3.0 0.425 0.65 8 5 1 : Drain 2 : Source 3 : Source 1 4 0.125 4 : Gate 0.25 5 : Drain 6 : Source 7 : Source 8 : Drain Specifications SANYO : TSSOP8 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID --6 A Drain Current (Pulse) IDP PW?10µs, duty cycle?1% --30 A Allowable Power Dissipation PD Mounted on a ceramic board (1000mm2 0.8mm) 1.3 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Charact