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fts1018

Ordering number : ENN7005 FTS1018 P-Channel Silicon MOSFET FTS1018 Load Switching Applications Features Package Dimensions • Low ON-resistance. unit : mm • 4V drive. 2147A • Mounting height 1.1mm. [FTS1018] 3.0 0.425 0.65 8 5 1 : Drain 2 : Source 3 : Source 1 4 0.125 4 : Gate 0.25 5 : Drain 6 : Source 7 : Source 8 : Drain Specifications SANYO : TSSOP8 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID --4 A Drain Current (Pulse) IDP PW?10µs, duty cycle?1% --32 A Allowable Power Dissipation PD Mounted on a ceramic board (1000mm2 0.8mm) 1.3 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at T

Keywords

 fts1018 Datasheet, Design, MOSFET, Power

 fts1018 RoHS, Compliant, Service, Triacs, Semiconductor

 fts1018 Database, Innovation, IC, Electricity

 

 
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