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fts2002

Ordering number:EN5906 N-Channel Silicon MOSFET FTS2002 DC-DC Converter Applications Features Package Dimensions · Low ON resistance. unit:mm · 4V dirve. 2147 · Mount height 1.1mm. 3.0 [FTS2002] 0.975 0.65 8 5 1:Drain 2:Source 3:Source 4:Gate 5:Drain 1 4 0.125 6:Source 0.25 7:Source 8:Drain SANYO:TSSOP8 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 5 A Drain Current (pulse) IDP PW? 10µs, duty cycle? 1% 30 A Allowable Power Dissipation PD Mounted on a ceramic board (1000mm2? 0.8mm) 1.5 W Channel Temperature Tch 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter

Keywords

 fts2002 Datasheet, Design, MOSFET, Power

 fts2002 RoHS, Compliant, Service, Triacs, Semiconductor

 fts2002 Database, Innovation, IC, Electricity

 

 
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