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fts2004

Ordering number:ENN5949A N-Channel Silicon MOSFET FTS2004 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · 4V drive. 2147A · Mounting height 1.1mm. [FTS2004] 3.0 0.425 0.65 85 1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Source 7 : Source 14 8 : Drain 0.125 0.25 SANYO : TSSOP8 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 4 A Drain Current (pulse) IDP PW? 10µs, duty cycle? 1% 25 A Allowable Power Dissipation PD Mounted on a ceramic board (1000mm2? 0.8mm) 1.3 W Channel Temperature Tch 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics a

Keywords

 fts2004 Datasheet, Design, MOSFET, Power

 fts2004 RoHS, Compliant, Service, Triacs, Semiconductor

 fts2004 Database, Innovation, IC, Electricity

 

 
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