View fts2012 datasheet:

Ordering number:ENN6360 N-Channel Silicon MOSFET FTS2012 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · 4V drive. 2147A · Mounting height 1.1mm. [FTS2012] 3.0 0.425 0.65 85 1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Source 14 7 : Source 0.125 8 : Drain 0.25 Specifications SANYO : TSSOP8 Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 8 A Drain Current (pulse) IDP PW? 10µs, duty cycle? 1% 32 A Mounted on a ceramic board (1000mm2? 0.8mm) Allowable Power Dissipation PD 1.3 W ?C Channel Temperature Tch 150 Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics a