View fts2015 datasheet:

Ordering number : ENN6667 FTS2015 N-Channel Silicon MOSFET FTS2015 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. unit : mm • 2.5V drive. 2147A • Mount height 1.1mm. [FTS2015] 3.0 0.425 0.65 8 5 1 : Drain 2 : Source 3 : Source 1 4 0.125 4 : Gate 0.25 5 : Drain 6 : Source 7 : Source 8 : Drain SANYO : TSSOP8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID 7 A Drain Current (Pulse) IDP PW?10µs, duty cycle?1% 28 A Allowable Power Dissipation PD Mounted on a ceramic board (1000mm2 0.8mm) 1.3 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristi