View fx205 datasheet:

Ordering number:EN4917 FX205 P-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions · Low ON-resistance. unit:mm · Very high-speed switching. 2121 · Low-voltage drive. [FX205] Switching Time Test CIrcuit 1:No Contact 2:Gate 3:Source 4:No Contact 5:Drain 6:Drain SANYO:XP5 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS –60 V Gate-to-Source Voltage VGSS ±25 V Drain Current (DC) ID –2 A Drain Current (Pulse) IDP PW?10µs, duty cycle?1% –8 A Allowable Power Dissipation PD Tc=25?C 8 W PD Mounted on ceramic board (750mm2?0.8mm) 2 W Channel Temperature Tch 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?