View fx605 datasheet:

Ordering number:EN4888 FX605 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions · Composite type composed of two low ON-resistance unit:mm P-channel MOSFET chips for ultrahigh-speed 2120 switching and low-voltage drive. [FX605] · Facilitates high-density mounting. · The FX605 is formed with two chips, each being equivalent to the 2SJ190, placed in one package. · Matched pair characteristics. 1:Gate1 2:Source1 3:Source2 4:Gate2 5:Drain2 6:Drain1 SANYO:XP6 (Bottom view) Switching Time Test CIrcuit Electrical Connection 1:Gate1 2:Source1 3:Source2 4:Gate2 5:Drain2 6:Drain1 (Top view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS –60 V Gat