View hf51a060ace datasheet:

Preliminary Data Sheet PD-20610 11/98 HF51A060ACE Hexfred Die in Wafer Form 600 V Size 51 5" Wafer Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VFM Forward Voltage 1.2V Max. TJ = 25°C, IF = 10.0A BVR Reverse Breakdown Voltage 600V Min. TJ = 25°C, IR = 200µA IRM Reverse Leakage Current 25µA Max. TJ = 25°C, VR = 600V Mechanical Data Nominal Back Metal Composition, Thickness Cr-Ni-Ag ( 1kA-4kA-6kA ) Nominal Front Metal Composition, Thickness 99% Al, 1% Si (3 microns) Chip Dimensions 0.340" x 0.195" Wafer Diameter 125mm, with std. < 100 > flat Wafer Thickness .015" ± .003" Relevant Die Mechanical Dwg. Number 01-5312 Minimum Street Width 100 Microns Reject Ink Dot Size 0.25mm Diameter Minimum Recommended Storage Environ