All Transistors. Datasheet

 

View hgtd3n60 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

hgtd3n60

HGTD3N60C3, S E M I C O N D U C T O R HGTD3N60C3S June 1996 6A, 600V, UFS Series N-Channel IGBT Features Packaging JEDEC TO-251AA • 6A, 600V at TC = +25oC • 600V Switching SOA Capability EMITTER COLLECTOR • Typical Fall Time - 130ns at TJ = +150oC GATE • Short Circuit Rating • Low Conduction Loss COLLECTOR (FLANGE) Description The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOS- JEDEC TO-252AA FETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss COLLECTOR of a bipolar transistor. The much lower on-state voltage drop var- (FLANGE) ies only moderately between +25oC and +150oC. GATE The IGBT is ideal for many high voltage switching applica

Keywords

 hgtd3n60 Datasheet, Design, MOSFET, Power

 hgtd3n60 RoHS, Compliant, Service, Triacs, Semiconductor

 hgtd3n60 Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.