View hgtd3n60 datasheet:

HGTD3N60C3, S E M I C O N D U C T O R HGTD3N60C3S June 1996 6A, 600V, UFS Series N-Channel IGBT Features Packaging JEDEC TO-251AA • 6A, 600V at TC = +25oC • 600V Switching SOA Capability EMITTER COLLECTOR • Typical Fall Time - 130ns at TJ = +150oC GATE • Short Circuit Rating • Low Conduction Loss COLLECTOR (FLANGE) Description The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOS- JEDEC TO-252AA FETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss COLLECTOR of a bipolar transistor. The much lower on-state voltage drop var- (FLANGE) ies only moderately between +25oC and +150oC. GATE The IGBT is ideal for many high voltage switching applica