View hgtd7n60 datasheet:

HGTD7N60C3, S E M I C O N D U C T O R HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Channel IGBT June 1996 Features Packaging JEDEC TO-220AB • 14A, 600V at TC = +25oC COLLECTOR EMITTER • 600V Switching SOA Capability GATE • Typical Fall Time - 140ns at TJ = +150oC • Short Circuit Rating • Low Conduction Loss COLLECTOR (FLANGE) Description JEDEC TO-251AA The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are COLLECTOR EMITTER MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These GATE devices have the high input impedance of a MOSFET and COLLECTOR (FLANGE) the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. JEDEC TO-252AA T