View hgtd8p50 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
HGTD8P50G1, S E M I C O N D U C T O R HGTD8P50G1S 8A, 500V P-Channel IGBTs May 1996 Features Package JEDEC TO-251AA 8A, 500V EMITTER 3.7V VCE(SAT) COLLECTOR GATE Typical Fall Time - 1800ns High Input Impedance (FLANGE) TJ = +150oC COLLECTOR Description JEDEC TO-252AA The HGTD8P50G1 and the HGTD8P50G1S are P-channel enhancement-mode insulated gate bipolar transistors (
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